METHOD FOR FORMING THE PATTERN IN THE SEMICONDUCTOR DEVICE
PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a micro contact hole pattern using a negative development process, thereby increasing resolution. CONSTITUTION: A hard mask layer is formed on a layer(100) to be etched. A first photosensitive film is coated on the...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
20.12.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a micro contact hole pattern using a negative development process, thereby increasing resolution. CONSTITUTION: A hard mask layer is formed on a layer(100) to be etched. A first photosensitive film is coated on the hard mask layer. A first photosensitive pattern is formed by performing a light exposure process and a negative development process on the first photosensitive film. The hard mask layer is etched by the first photosensitive pattern to form a hard mask first pattern(110a). A second photosensitive film is coated on the etched layer with a first pattern. A second photosensitive pattern is formed by performing a light exposure process and a negative development process on the second photosensitive film. |
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Bibliography: | Application Number: KR20100089439 |