METHOD FOR FORMING THE PATTERN IN THE SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a micro contact hole pattern using a negative development process, thereby increasing resolution. CONSTITUTION: A hard mask layer is formed on a layer(100) to be etched. A first photosensitive film is coated on the...

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Bibliographic Details
Main Author BOK, CHEOL KYU
Format Patent
LanguageEnglish
Korean
Published 20.12.2011
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a micro contact hole pattern using a negative development process, thereby increasing resolution. CONSTITUTION: A hard mask layer is formed on a layer(100) to be etched. A first photosensitive film is coated on the hard mask layer. A first photosensitive pattern is formed by performing a light exposure process and a negative development process on the first photosensitive film. The hard mask layer is etched by the first photosensitive pattern to form a hard mask first pattern(110a). A second photosensitive film is coated on the etched layer with a first pattern. A second photosensitive pattern is formed by performing a light exposure process and a negative development process on the second photosensitive film.
Bibliography:Application Number: KR20100089439