PREPARATION METHOD FOR THIN FILM TRANSISTOR USING LOW TEMPERATURE PROCESS

• Main Authors: LEE, WON BAEK, JUNG, SUNG WOOK, JANG, KYUNG SOO, CHUNG, HO KYOON, BAEK, IL HO, YI, JUN SIN
• Format: Patent
• Language: English; Korean
• Published: 08.11.2011
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A method for manufacturing a silicon thin film transistor using a low temperature process is provided to reduce manufacturing costs by simplifying a crystallization process using a laser and a doping process. CONSTITUTION: A buffer layer(110) is formed on a substrate. An n type or p type micro crystal silicon thin film is deposited on the buffer layer. A source electrode or drain electrode is formed by patterning the n type or p type micro crystal silicon thin film. An active layer is formed on the source electrode or drain electrode. An insulation layer and a metal electrode(150) are formed on the active layer. A gate electrode(160) is formed by patterning the active layer, the insulation layer, and the metal electrode on the substrate. The n type or p type micro crystal silicon thin film is formed by a low temperature chemical vapor deposition process.