PHASE CHANGE MEMORY DEVICE CAPABLE OF REDUCTION DISTURBANCE AND METHOD OF MANUFACTURING THE SAME

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to extend the effective length between heating electrodes by forming a curved part on an interlayer insulation layer between the heating electrodes extended in one bit line. CONSTITUTION: A plurality of word lines(...

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Bibliographic Details
Main Author LEE, JANG UK
Format Patent
LanguageEnglish
Korean
Published 03.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A phase change memory device and a manufacturing method thereof are provided to extend the effective length between heating electrodes by forming a curved part on an interlayer insulation layer between the heating electrodes extended in one bit line. CONSTITUTION: A plurality of word lines(110) are parallel extended with a preset space. A plurality of heating electrodes(140) are electrically connected to the word line. An interlayer insulation layer(130) insulates the heating electrodes. A plurality of phase change lines(150) are electrically connected to the heating electrodes. A curved part is formed on the surface of the interlayer insulation layer between the word lines.
Bibliography:Application Number: KR20090128786