GAS INJECTION UNIT AND APPARATUS AND METHOD FOR DEPOSITING THIN LAYER WITH THE SAME

• Main Author: PARK, HYEONG SOO
• Format: Patent
• Language: English; Korean
• Published: 24.11.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A gas injection unit and an apparatus and a method for depositing a thin layer with the same are provided to prevent an expected reaction of reaction gas by cooling down the reaction gas less than a reaction temperature. CONSTITUTION: A process chamber(100) comprises an upper wall(102), a sidewall(104) and a bottom wall(106). The exhaust unit comprises an exhaust line(210), an exhaust member(220), and a valve(230). A substrate support unit(300) in the process chamber supports a substrate. A heating unit(400) heats the substrate which is supported by the support plate. A gas emission unit(500) ejects metal organic compound gas and hydrogen compound gas.