SPIN TRANSISTOR USING PERPENDICULAR MAGNETIZATION

• Main Authors: CHANG, JOON YEON, KIM, HYUNG JUN, HAN, SUK HEE, MA, JIN SEOCK, KOO, HYUN CHEOL
• Format: Patent
• Language: English
• Published: 29.08.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A spin transistor using perpendicular magnetization is provided to easily miniaturize a spin transistor while enabling resistance adjustment caused by a gate by forming a ferromagnetic source/drain whose magnetization direction is perpendicular to the upper surface of a channel layer. A channel layer(7) is formed in a semiconductor substrate(10). A ferromagnetic source(22) and a ferromagnetic drain(23) are disposed on the semiconductor substrate, separated from each other and magnetized in a direction perpendicular to the upper surface of the channel layer. A gate(15) is formed on the semiconductor substrate between the source and the drain, adjusting the spin direction of electrons passing through the channel layer. Spin-polarized electrons are implanted from the source to the channel layer, and the implanted electrons pass through the channel layer and are implanted into the drain. When the electron passes through the channel layer, the spin of the electron processes according to the voltage of the gate by a spin-orbit coupling inducing magnetic field(14). The magnetization direction of the source and the drain is uniformly fixed during an on-and-off operation. In the source and the drain, a ferromagnetic thin film and a non-magnetic thin film can be stacked alternately and repeatedly in a direction perpendicular to the upper surface of the channel layer.