METHOD OF FOMRING A VERTICAL DIODE AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME

• Main Authors: YOU, YOUNG SUB, LEE, KONG SOO, HAN, JAE JONG, PARK, SANG JIN, HYUNG, YONG WOO
• Format: Patent
• Language: English
• Published: 13.08.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a vertical diode and a method for manufacturing a phase-change memory device using the same are provided to reduce a thermal budget by crystallizing an amorphous silicon layer and forming a polysilicon layer at low temperature. An insulating structure having an opening is formed on a substrate(105). An amorphous silicon layer is formed on the substrate to bury the opening. A metal silicide layer(140) is formed on the amorphous silicon layer. The amorphous silicon layer is crystallized by using metal atoms of the metal silicide layer, to form a polysilicon layer within the opening. A doped polysilicon layer(150) is formed by implanting impurity ions into the polysilicon layer. The metal silicide layer is formed by using one element selected from a group including nickel, palladium, titanium, and copper.