METHOD FOR MANUFACTURING THICK FILM OF GAN

• Main Authors: KANG, TAE WON, KWON, YOUNG HAE, RYU, SUNG RYONG
• Format: Patent
• Language: English
• Published: 19.06.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a GaN thick film is provided to suppress a defect due to a lattice mismatch and a difference in thermal expansion coefficients by forming a GaN nanotube with the same density, size, and length on amorphous substrates. A process chamber includes a reaction fuel vaporization region, a mixture gas reaction region, and a nanotube forming region. A temperature of a heat source in the reaction fuel vaporization region lies between 800 and 850°C. A temperature of a heat source in the mixture gas reaction region lies between 900 and 1150°C. A temperature of a heat source in the nanotube forming region lies between 600 and 750°C. An HVPE(Hydride or halide Vapor Phase Epitaxy) vaporization apparatus includes the process chamber. A GaN nanotube is grown on an amorphous substrate by using the HVPE vaporization apparatus, such that a GaN nanotube template is formed. A GaN protective film is grown on the GaN nanotube template. A GaN thick film is grown on the GaN protective film.