NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Author: CHEONG, MYUNG GOO
• Format: Patent
• Language: English
• Published: 05.03.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A nitride semiconductor light emitting device and a manufacturing method thereof are provided to decrease a potential density and to improve crystalline and optical characteristics by forming grooves on an active layer. A substrate(11) for nitride single-crystal growing is prepared. An n-type nitride semiconductor layer(13) is grown on the substrate. One or more quantum barrier layers and one or more quantum well layers are alternatively grown on the n-type nitride semiconductor layer to form an active layer(14). One or more grooves(P) are formed on the active layer. A p-type nitride semiconductor layer(16) is grown on the active layer. The p-type nitride semiconductor layer having the active layer gap-fills the grooves. A depth of the groove is less than a thickness of the active layer.