MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A method for fabricating a semiconductor device is provided to simplify the fabricating process by executing etching processes for forming a via hole and eliminating a photosensitive film in the same chamber. An insulating layer(2) and a photosensitive film pattern(3) are sequentially formed on a se...

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Bibliographic Details
Main Author JU, SANG MIN
Format Patent
LanguageEnglish
Published 01.02.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device is provided to simplify the fabricating process by executing etching processes for forming a via hole and eliminating a photosensitive film in the same chamber. An insulating layer(2) and a photosensitive film pattern(3) are sequentially formed on a semiconductor substrate(1) having a desired lower structure in a chamber. The insulating layer is etched by using the photosensitive film pattern as an etching mask to form a via hole(4) on the insulating film, while the chamber is maintained at a temperature of 10 to 30deg.C. The photosensitive film pattern is eliminated, while the chamber is maintained at a temperature of 10 to 30 deg.C.
Bibliography:Application Number: KR20050087764