CONTROL METHOD OF A FILM DEPOSITION APPARATUS

A method for controlling a film deposition apparatus is provided to prevent first wafer effect by selectively proceeding a pre-conditioning in response to an instruction from an operator. An idle state of equipment is determined(ST100). If the equipment is not an idle state, a wafer process procedur...

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Bibliographic Details
Main Author YOU, DONG HO
Format Patent
LanguageEnglish
Published 27.10.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for controlling a film deposition apparatus is provided to prevent first wafer effect by selectively proceeding a pre-conditioning in response to an instruction from an operator. An idle state of equipment is determined(ST100). If the equipment is not an idle state, a wafer process procedure runs(ST110). Otherwise, if the equipment is the idle state, a pre-conditioning is automatically proceeded(ST120). During the wafer process procedure, it is determined whether the equipment is reset(ST130). If the equipment is reset, it is questioned whether a pre-conditioning with respect to the whole reactors is proceeded(ST160). If the result is positive, the pre-conditioning is proceeded with respect to the whole reactors, and then the process procedure is performed(ST170).
Bibliography:Application Number: KR20050116965