IMPLANTER FOR UNIFORMITY OF TRANSISTOR PARAMETER AND METHOD FOR IMPLANTATION USING THE SAME

A X/Y scanner (22) deflects transmitted ion beam focussed by a quadrupole magnet assembly (21), in both horizontal and vertical directions. A quadrupole magnet assembly (23) converges and diverges the ion beam deflected by scanner in both directions. A beam parallelizer (24) rotates the ion beam in...

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Bibliographic Details
Main Authors JIN, SEUNG WOO, ROUH, KYOUNG BONG, LEE, MIN YONG
Format Patent
LanguageEnglish
Published 23.12.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A X/Y scanner (22) deflects transmitted ion beam focussed by a quadrupole magnet assembly (21), in both horizontal and vertical directions. A quadrupole magnet assembly (23) converges and diverges the ion beam deflected by scanner in both directions. A beam parallelizer (24) rotates the ion beam in synchronization with the magnet assembly (23), to implant ions into a wafer (25). An independent claim is also included for ions implantation method.
Bibliography:Application Number: KR20040060737