METHOD FOR FORMING FINE CONTACT OF SEMICONDUCTOR DEVICE USING INSULATING SPACER

• Main Author: KUEM, DONG RYEOL
• Format: Patent
• Language: English; Korean
• Published: 09.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a fine contact of a semiconductor device is provided to improve isolation property between adjacent conductive layers and to prevent damage of a junction region by forming an insulating spacer at inner walls of a groove. CONSTITUTION: An interlayer dielectric(17) and a...