METHOD FOR MANUFACTURING LIGHT EMITTING DIODE

PURPOSE: A method of forming a LED(Light Emitting Diode) is provided to achieve a low resistance interface between a second substrate and LED layers and to provide passivation or light-reflection by using wafer bonding technique. CONSTITUTION: A method of forming a LED(Light Emitting Diode) includes...

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Bibliographic Details
Main Authors ROBBINS VIRGINIA M, KISH FRED A, DEFEVER DENNIS C, UEBBING JOHN, STERANKA FRANK M
Format Patent
LanguageEnglish
Korean
Published 17.10.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method of forming a LED(Light Emitting Diode) is provided to achieve a low resistance interface between a second substrate and LED layers and to provide passivation or light-reflection by using wafer bonding technique. CONSTITUTION: A method of forming a LED(Light Emitting Diode) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties.
Bibliography:Application Number: KR20020000575