METHOD FOR MANUFACTURING IC SEMICONDUCTOR DEVICE
PURPOSE: A method for manufacturing an IC semiconductor device is provided to be capable of improving the design margin of a contact hole. CONSTITUTION: A plurality of gate electrodes(23) are formed on a semiconductor substrate(21). A source/drain region is formed in the substrate. The first contact...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
28.06.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for manufacturing an IC semiconductor device is provided to be capable of improving the design margin of a contact hole. CONSTITUTION: A plurality of gate electrodes(23) are formed on a semiconductor substrate(21). A source/drain region is formed in the substrate. The first contact hole is formed on the source/drain region by self-aligning. A bit line(28) is formed by depositing a polysilicon layer on the resultant structure. The second contact hole is formed not to be overlapped with the gate electrode by self-aligning. Then, a metal line is formed on the resultant structure. |
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Bibliography: | Application Number: KR19950054362 |