METHOD FOR MANUFACTURING IC SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing an IC semiconductor device is provided to be capable of improving the design margin of a contact hole. CONSTITUTION: A plurality of gate electrodes(23) are formed on a semiconductor substrate(21). A source/drain region is formed in the substrate. The first contact...

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Bibliographic Details
Main Authors KIM, JIN HA, JANG, HYEON SU, NAM, SANG GYUN
Format Patent
LanguageEnglish
Korean
Published 28.06.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing an IC semiconductor device is provided to be capable of improving the design margin of a contact hole. CONSTITUTION: A plurality of gate electrodes(23) are formed on a semiconductor substrate(21). A source/drain region is formed in the substrate. The first contact hole is formed on the source/drain region by self-aligning. A bit line(28) is formed by depositing a polysilicon layer on the resultant structure. The second contact hole is formed not to be overlapped with the gate electrode by self-aligning. Then, a metal line is formed on the resultant structure.
Bibliography:Application Number: KR19950054362