EXPOSURE MASK FOR SEMI-CONDUCTOR DEVICE

PURPOSE: Provided is an exposure mask for semi-conductor device which prevents a short circuit owing to residue of photosensitive film, and the disconnection owing to excess exposure, and can improve yield of process. CONSTITUTION: The exposure mask comprises a repeating pattern(2) of chrome pattern...

Full description

Saved in:
Bibliographic Details
Main Author MOON, SEUNG CHAN
Format Patent
LanguageEnglish
Korean
Published 23.11.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: Provided is an exposure mask for semi-conductor device which prevents a short circuit owing to residue of photosensitive film, and the disconnection owing to excess exposure, and can improve yield of process. CONSTITUTION: The exposure mask comprises a repeating pattern(2) of chrome pattern which is formed on the transparent substrate(1). The center part(2A) of the repeating pattern(2) forms a minimal line/space pattern width(X,Y), and a circumference(2B) of the repeating pattern(2) forms a line/spacer pattern line width(X1,Y1) corresponding to light contrast, wherein X>Y. Aperiodic pattern(3) or independent pattern such as internal wiring is formed on the transparent substrate(1). Line width(X2) of aperiodic pattern is the same as the repeating pattern(2). The spacer width(Y2) is wider than the width(Y). 본발명은 반도체소자용 노광마스크에 관한 것으로서, 반도체소자의 메모리 영역과 대응부분에 형성되어 있는 반복패턴 중앙부분의 라인/스페이스 패턴 폭을 최소폭으로하고, 상기 반복패턴의 주변부분의 라인/스페이스 패턴폭을 증가시키며, 주변회로 영역에 대응되는 부분에 형성되어 있는 비주기적패턴의 스페이스 패턴 폭을 증가시키고, 독립패턴의 라인폭을 증가시켜 변형 조명 노광법을 사용하는 노광 공정시 반도체소자의 위치에 따른 광 콘트라스트를 동일하게하였으므로, 감광막 찌꺼기에 의한 단락이나, 과노출에 의한 단선등의 불량을 방지하여 공정수율 및 소자동작의 신뢰성을 향상시킬 수 있다.
Bibliography:Application Number: KR19940039061