WAFER BONDING OF LIGHT EMITTING DIODE LAYERS

• Main Authors: ROBBINS VIRGINIA M, KISH FRED A, DEFEVER,DENNIS C, UEBBING JOHN, STERANKA FRANK M
• Format: Patent
• Language: English; Korean
• Published: 19.06.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: Provided is a method of forming an LED having the desirable mechanical characteristics of a thick substrate and the desirable optical characteristics of a transparent-substrate LED. CONSTITUTION: An exemplary temporary growth substrate(30) is a GaAs substrate within the range of 250 to 500 μm thick. Four LED layers(32,34,36,38) are then grown on the growth substrate(30). The layers(32-38) may be grown using any of a variety of known methods, including liquid phase epitaxy, vapor phase epitaxy, metalorganic chemical vapor deposition and molecular beam epitaxy. The layer(32) directly above the growth substrate(30) is an n-doped buffer layer. Grown above the buffer layer is a lower confining layer(34) of n-doped AlGaInP. The lower confining layer(34) has an exemplary thickness of 800 nanometers.