METHOD FOR FABRICATING GATE ELECTRODE USING ANTI-REFLECTIVE LAYER AND METHOD FOR FORMING SELF-ALIGNED CONTACT USING THE SAME

• Main Authors: SHIN, GYEONG SEOP, LEE, WON SEOK, JUNG, SANG SEOP
• Format: Patent
• Language: English; Korean
• Published: 15.01.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for fabricating a gate electrode using an anti-reflective layer and a method for forming a self-aligned contact using the same are provided to form a gate electrode having a sufficient insulating margin between an electrode and a contact by using an anti-reflective layer. CONSTITUT...