METHOD FOR FABRICATING GATE ELECTRODE USING ANTI-REFLECTIVE LAYER AND METHOD FOR FORMING SELF-ALIGNED CONTACT USING THE SAME

• Main Authors: SHIN, GYEONG SEOP, LEE, WON SEOK, JUNG, SANG SEOP
• Format: Patent
• Language: English; Korean
• Published: 15.01.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for fabricating a gate electrode using an anti-reflective layer and a method for forming a self-aligned contact using the same are provided to form a gate electrode having a sufficient insulating margin between an electrode and a contact by using an anti-reflective layer. CONSTITUTION: A doped polysilicon layer and a metallic silicide layer are formed on a semiconductor substrate(10). A capping layer is formed on the metallic silicide layer. An anti-reflective layer is formed on the capping layer. A protective layer is formed on the anti-reflective layer. The protective layer, the anti-protective layer and the capping layer are etched by performing a photo-lithography process. A mask pattern(38) including a capping layer pattern(32a), an anti-respective layer pattern(34a) and a protective layer pattern(36a) is formed by etching the protective layer, the anti-protective layer, and the capping layer. A gate electrode(26) is formed by etching the metallic silicide layer and the doped polysilicon layer.