Capacitor maunfacturing method of semi-conductor device

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent the reduction of static capacitance by forming a tungsten silicide film on a peripheral portion of a lower electrode. CONSTITUTION: A lower electrode(26) is formed on a semiconductor substrate(10). A hem...

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Bibliographic Details
Main Authors KANG, SEONG-HUN, LEE, JUNG-KYU, KOH, YOUNG-LARK
Format Patent
LanguageEnglish
Korean
Published 15.06.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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