PROCESS FOR REDUCING CIRCUIT DAMAGE DURING PECVD IN SINGLE WAFER PECVD SYSTEM

• Main Authors: KONECNI, ANTHONY JOSEPH, GREWAL, VIRINDER SINGH, FORSTER, JOHN CURT, COTE, DONNA RIZZONE, PODLESNIKAGAN VALENTIN
• Format: Patent
• Language: English; Korean
• Published: 15.05.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명의 플라즈마 증강 화학 기상 증착(plasma enhanced chemical vapor deposition; PECVD) 공정에 있어서는, 플라즈마 전위를 균일한 수준으로 제어하고 유지하여, 형성된 플라즈마를 방전 챔버 벽의 영향을 받지 않는 전극 사이의 갭 지역에 제한한다. 약 12Torr를 초과하는 고압하에서 시스템을 가동시키고, 정 전위가 바람직하게는 약 10V를 초과할 때까지 상부 내지는 피구동 전극(driven electrode)위의 DC 바이어스를 관찰하여 그 동작을 감시함으로써 플라즈마 전위를 제어한다. 이 시점에서 대칭적 글로우 방전(glow discharge) 및 제어된 플라즈마는 피구동 전극과 서셉터 전극(susceptor electrode) 사이에 존재하고, 약 14Torr와 20Torr 사이의 압력 유지에 의해 제어가능하여, 코팅되는 반도체 본체에 대한 플라즈마 손상이 감소됨으로써 수율(yield)이 최대화될 수 있다. In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes (13, 14) away from the influence of the walls (12) of the discharge chamber (11). The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode (13) until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode (13) and the susceptor electrode (14), controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body (15) being coated which maximizes yield.