METHOD OF MANUFACTURING GATE OXIDE OF SEMICONDUCTOR DEVICE

• Main Author: BANG, CHOL WON
• Format: Patent
• Language: English; Korean
• Published: 15.05.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a gate oxide for a semiconductor device is to remove an excess carrier or impurity ion existing in the gate oxide, thereby enhancing an electrical characteristic and reliability. CONSTITUTION: A silicon substrate is dry-oxidized at an oxygen atmosphere at a temperature range of 900 to 940 deg.C for 5 minute to form the first dry-oxide layer. The silicon substrate is wet-oxidized at an oxygen and nitrogen atmosphere at the same temperature range for 25 minutes to form the first dry-oxide layer. The silicon substrate is first annealed at a nitrogen atmosphere at the same temperature range for 10 minutes. After that, the silicon substrate is wet-oxidized at an oxygen and hydrogen atmosphere at the same temperature range for 2 minutes to form the second wet-oxide layer. The silicon substrate is dry-oxidized at the oxygen atmosphere at the same temperature range for 5 minutes to form the second dry-oxide layer. The silicon substrate is secondly annealed at the nitrogen atmosphere at the same temperature range for 10 minutes. 본 발명은 반도체소자의 제조방법에 관한것으로, 특히, 게이트 산화막 형성방법에 있어서, 어닐링 공정을 산화막 형성 중간, 및 산화막 형성 후 이중으로 실시하는 것을 특징으로 하는 반도체소자의 게이트산화막 형성방법을 제공한다. 따라서 반도체소자의 전기적 특성 및 신뢰도를 향상시킬 수 있다.