METHOD FOR AND APPARATUS OF SEMICONDUCTOR DRY ETCHING

• Main Authors: SHIN, KYUNG SUP, JHEE, HYUNG KOO
• Format: Patent
• Language: English
• Published: 15.04.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A dry etch method is provided to prevent erosion of a photoresist film pattern in an etch region and to maintain or reduce the line width on the etch region. CONSTITUTION: A dry etch method forms a photoresist film pattern(24) so that an etch portion on a given film(22) formed on a semiconductor substrate(20) can be exposed. An RF source power is applied to an electrode within an etch chamber to form a plasma within the etch chamber. An RF bias power is applied to another electrode supporting the semiconductor substrate(20) within the etch chamber. The RF source power and the RF bias power are periodically turned on/off and the RF source power and the RF bias power have a given phase difference. Polymers(28) is formed on the non-etched photoresist pattern(24) with a given portion of the photoresist pattern(24) at both sides of the etch portion remained non-etched, so that the line width at the etch portion can be maintained.