METHOD FOR FABRICATING OF MEMORY CELL

• Main Authors: PARK, YOO-BAE, HAN, BYONG-YOUL
• Format: Patent
• Language: English; Korean
• Published: 15.04.2000
• Edition: 7
• Subjects: ELECTRICITY

PURPOSE: A method for fabricating a memory cell is provided to be able to simplify a stack structure forming process by forming one polysilicon layer required to a double stack together with a gate. CONSTITUTION: A polysilicon(22), a cap oxide(23), a nitride(24) and a polysilicon(25) are sequentially formed on a gate area after defining a field area and an active area by forming field oxides(21) on both sides of a substrate(20). Then, a photoresist layer(28) is formed on all surface except a capacitor area after forming sidewalls(26) on both sides of the polysilicon(22), cap oxide(23) and nitride(24) and forming an oxide(27) on all surface. Next, a polysilicon is formed on all surface after removing the oxide(27) except the photoresist layer(28) area and then removing the photoresist layer(28), a photoresist layer is formed on the capacitor area, the polysilicon(25) and oxide(27) except the capacitor area are removed, and the photoresist layer is removed. Then, the oxide(27) of the capacitor area is removed, a dielectric(31) is formed on the polysilicon(25), and then a plate is formed on the dielectric. Next, metal is formed on all surface after forming an insulating layer on all surface except a central area. 본 발명은 이중 스택 제조공정을 간단히 할수 있는 메모리 셀 제조방법에 관한것으로, 종래에는 노드 형성을 위한 폴리실리콘 패터닝시 마스크 공정이 두번이상 이루어지므로써 공정이 복잡하였으나, 본 발명에서는 이중 스택 구조의 일부인 폴리실리콘(25)을 게이트 형성시 실현하므로써 이중 스택구조 형성시 마스크 1장만이 필요하는등 공정이 간단해지므로 상기 결점을 개선시킬 수 있는 것이다.