PURIFYING METHOD OF HARMFUL GAS

• Main Authors: IWATA, KEIICHI, HATAKEYAMA, TOSHIYA
• Format: Patent
• Language: English; Korean
• Published: 01.02.2000
• Edition: 7
• Subjects: CHEMICAL MATERIALS FOR USE IN BREATHING APPARATUS; CHEMICAL MEANS FOR EXTINGUISHING FIRES OR FOR COMBATING ORPROTECTING AGAINST HARMFUL CHEMICAL AGENTS; FIRE-FIGHTING; HUMAN NECESSITIES; LIFE-SAVING; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SEPARATION; TRANSPORTING

반도체 제조공정등으로 부터 배출되는 가스중에 포함되는 3불화질소, 2불화2질소등의 질소불화물을 유해한 부산물을 발생시키는 일이 없이 효율적으로 제거하는 것으로서 3불화질소등 질소불화물을 함유하는 가스를 정화통을 통해 지르코늄 또는 Zr-Fe, Zr-Cu, Zr-Ni, Zr-Al, Zr-Mg, Zr-Ca, Zr-Zn, Zr-Ce등의 지르코늄계 합금으로된 정화제와 가열하에 100-800℃ 바람직하게는 150-500℃로 접촉시키는 것을 특징으로 하는 유해가스의 정화방법이다. There is disclosed a process for cleaning a gas containing a nitrogen fluoride especially nitrogen trifluoride as the harmful component which comprises bringing the gas into contact with a cleaning agent comprising zirconium or a zirconium-based alloy such as Zr-Fe, Zr-Cu, Zr-Ni, Zr-Al, Zr-Mg, Zr-Ca, Zr-Zn, Zr-La and Zr-Ce to remove the harmful component at 100 to 800 DEG C, especially 150 to 500 DEG C. The process is capable of efficiently removing nitrogen fluoride, especially nitrogen trifluoride at a relatively low temperature without generating a harmful byproduct such as nitrogen oxide, and thus exhibits excellent effect on the cleaning of exhaust gas from semiconductor manufacturing process, etc.