METHOD AND DEVICE FOR PRODUCING MONOCRYSTALS

• Main Authors: DIETER, GRAF, ERICH, DORNBERGER, HANS, OLKRUG, WILFRIED, VON AMMON
• Format: Patent
• Language: English; Korean
• Published: 01.10.1999
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

본 발명은 소정의 온도범위에서 소정의 드웰시간(dwell time)동안 생장단 결정을 유지하는 실리콘단결정의 제조방법에 있어서, 그 온도범위를 850∼1100로 선택하여, 그 선택온도범위에서 생장단결정의 드웰시간이 250분 이상 또는 80분 이하로 함을 특징으로 하는 제조방법이다. 또, 본 발명은 하부림(lower rim)과 상부림(upper rim)사이에서 환상영역(annular zones)으로 분리시켜, 인접영역이 방열에 대한 열전도도 및 열투과도를 서로 달리하는 열실드(heat shield)에 의해 그 생장단결정의 냉각속도가 조정되는 방법 및 장치에 관한 것이다. In a silicon single crystal production process, the novelty is that (a) the growing crystal is held at 850-1100 degrees C for more than 250 minutes or for less than 80 minutes; or (b) the cooling rate of the growing crystal is controlled by a surrounding heat shield which is subdivided, between its upper and lower edges, into annular zones of different thermal conductivities and radiant heat permeabilities, the lower edge zone preferably having an emission coefficient of 0.3-0.9 and a heat conduction coefficient of 0.02-5 W/m.K. Also claimed is a silicon single crystal production apparatus including a heat shield surrounding the growing crystal.