COLLECTOR DEVICE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The present invention provides a collector device in a bipolar device, having a lateral collector structure on a buried oxide layer. This collector has a high breakdown voltage for high power and operating at a high speed, by isolating a horizontal collector from a substrate by a buried oxide film a...

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Bibliographic Details
Main Authors HAN, TAE-HYUN, YEOM, BYUNG-RYUL, CHO, DUCK-HOO, LEE, SOO-MIN
Format Patent
LanguageEnglish
Published 01.09.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a collector device in a bipolar device, having a lateral collector structure on a buried oxide layer. This collector has a high breakdown voltage for high power and operating at a high speed, by isolating a horizontal collector from a substrate by a buried oxide film and horizontally connecting a buried collector to a collector. The buried collector film is formed on the buried insulating film, surrounding the collector film and being horizontally connected to the collector film.
Bibliography:Application Number: KR19960065727