POSITIVE PHOTORESIST COMPOSITION

• Main Authors: KOKUBO, TADAYOSHI, SAKAGUCHI, SHINJI, UENISHI, KAZUYA
• Format: Patent
• Language: English; Korean
• Published: 20.03.1999
• Edition: 6
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC CHEMISTRY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

폴리히드록시 화합물과 (a) 1,2-나프토퀴논디아지도-5-(및/또는 -4-)설폰닐 클로라이드의 반응에 의해 얻어진 감광물질과 알카리 용해수지를 포함하되 상기의 감광물질이 하기의 감광화합물 (1)-(3)의 혼합물인 감광조성물이 기술되는데, 그 화합물은 : (1) 분자당 적어도 하나의 히드록실기를 갖으며 3-20의 범위내에서 히드록실기에 대한 1,2-나프토퀴논디아지도-5-(및/또는 -4-)설폰닐 클로라이드 설폰산염기의 번호비를 갖으며 50중량 ％이상의 양으로 감광물질에 포함된 감광화합물; (2) 폴리히드록시 화합물에서의 히드록실기가 1,2-나프토퀴논디아지도 설폰닐 에스테르화된 경우 30중량 ％-0중량 ％의 양으로 감광물질에 포함된 감광화합물; 및 (3) 분자당 1,2-나프토퀴논디아지도 설폰닐 에스테르화 되지않은 3개 이상의 히드록실기를 갖으며 20중량 ％-0중량 ％의 양으로 감광물질에 포함된 감광화합물이다. 이 조성물은 g-레이, i-레이, 엑스사이머 레이저로 노출되어 예리한 감광막 이미지를 제공하는데 적합하다. 또한 감광조성물은 고감광도, 고분해능, 정밀 재생도를 갖으므로 양호한 단면형상, 넓은 현상폭, 고내열, 및 양호한 저장안정도를 갖는 감광막 이미지를 제공한다. A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3): (1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt% or more; (2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt% to 0 wt%; and (3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt% to 0 wt%. The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.