SPUTTERING APPARATUS OF MAGNETRON

없음. A magentron sputtering apparatus includes a rotatable magnet. At least a portion of the centerline of the magnet lies on a curve defined by where xi (u) is a preselected erosion profile. When stationary, the magnet generates a localized magnetic field of approximately constant width. In operatio...

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Bibliographic Details
Main Authors HELMER, JOHN C, ANDERSON, ROBERT L
Format Patent
LanguageEnglish
Korean
Published 15.01.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:없음. A magentron sputtering apparatus includes a rotatable magnet. At least a portion of the centerline of the magnet lies on a curve defined by where xi (u) is a preselected erosion profile. When stationary, the magnet generates a localized magnetic field of approximately constant width. In operation, when the magnet is rotated, it generates the preselected erosion profile in the target. The preselected erosion profile may be constant.
Bibliography:Application Number: KR19900007247