METHOD FOR FORMING THE SEMICONDUCTOR DEVICE

• Main Authors: MURAKAMI, AKANE, MIGAZAKI, MINCRU, CUI, BAOCHUN
• Format: Patent
• Language: English; Korean
• Published: 20.03.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

본 발명은 기판을 의도적으로 가열하는 일 없이 0~100℃의 온도에서 절연 기판상에 스퍼터법등에 의해 ITO(Indium Tin Oxide)박막을 제작한 후에 수소 분위기 중에서 200℃보다 높은 온도에서 어닐하는 것을 특징으로 하는, 투명 도전막 제작방법이고, 또한 실온하에서 ITO 박막을 제작한 후 수소 분위기 중에서 어닐하기 전에 ITO 박막의 패터닝을 하는 것을 특징으로 하는 투명 도전막의 제작방법이며, 이 투명한 도전막을 갖는 반도체 장치 및 그의 제작방법이다. According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200 DEG C.