ALUMINUM NITRIDE SINTER AND PROCESS FOR THE PRODUCTION THEREOF

• Main Authors: KOMATSU, MICHIYASU, SHIRAI, TAKAO
• Format: Patent
• Language: English; Korean
• Published: 15.01.1999
• Edition: 6
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; TREATMENT OF NATURAL STONE

본 발명에 관한 질화 알루미늄 소결체는 주기율표 IIIa족 원소, Ca, Sr, Ba로부터 선택된 적어도 1종의 원소의 산화물 1 내지 10중량%와, 탄화보론 0.2 내지 2.0중량%와, SiO, SiN, SiC, SiNO, β-사이아론(Si-Al-O-N), α-사이아론 및 폴리타입의 질화알루미늄(Al-Si-O-N)으로부터 선택된 적어도 1종의 규소화합물을 Si 성분 환산으로 0.2중량% 이하와, 나머지를 구성하는 질화알루미늄으로 이루어지는 것을 특징으로 한다. 상기 구성에 의하면, AlN 소결체의 입성장을 제어하고, 소결체 조직을 미세화함과 함께 입계상과 결정입자와의 결합강도를 도모해 소결체의 강도 및 파괴이성치를 함께 개선하고, 질화 알루미늄 특유의 방열특성을 손상하지 않고 기계적 강도 및 파괴인성치를 함께 높인 AlN 소결체가 얻어진다. The aluminum nitride sintered body according to the present invention comprises 1 - 10 % by weight of at least one element selected from a group consisting of a group IIIa element listed in periodic table, Ca, Sr and Ba in terms of the amount of an oxide thereof, 0.2 - 2.0 % by weight of boron carbide, at most 0.2 % by weight of at least one silicon compound selected from a group consisting of SiO2, Si3N4, SiC, Si2N2O, beta -Sialon, alpha -Sialon and poly-type aluminum nitride (Al-Si-O-N) in terms of the amount of Si component, and the balance of aluminum nitride. According to the foregoing structure, there is available an AlN sintered body in which grain growth of the AlN sintered body is inhibited; the sintered body structure is fined; coupling of grain boundaries and crystal grains is intensified, thereby improving both strength and fracture toughness of the sintered body and increasing mechanical strength and fracture toughness without impairing heat radiation characteristics intrinsic to aluminum nitride.