METHOD OF MANUFACTURING LOW DIELECTRIC LATE THIN USING SF6 GAS

PROBLEM TO BE SOLVED: To obtain a low-permittivity thin film excellent in gap falling capability by injecting SF6 gas as fluorine material gas, and further injecting SiH4 gas and TEOS(OC2 H5 )4 as silicon oxide material gas to form a SiH4 thin film. SOLUTION: A semiconductor substrate 10 is mounted...

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Bibliographic Details
Main Authors BAEK, JONG-TAE, KANG, SEUNG-YEUL, JANG, WON-IK, YU, BYUNG-KON, KIM, KWANG-HO
Format Patent
LanguageEnglish
Published 01.02.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a low-permittivity thin film excellent in gap falling capability by injecting SF6 gas as fluorine material gas, and further injecting SiH4 gas and TEOS(OC2 H5 )4 as silicon oxide material gas to form a SiH4 thin film. SOLUTION: A semiconductor substrate 10 is mounted on the semiconductor susceptor 11 in the reaction furnace of a remote plasma enhanced chemical vapor deposition (RPCVD) system. Then the semiconductor substrate is heated. With the semiconductor substrate in this state, SF6 +O2 mixed gas is injected as fluorine material gas for the formation of a low-permittivity SiOF thin film. In addition, SF6 +O2 gas is injected, and SiH4 gas and TEOS(OC2 H5 )4 are injected as silicon oxide material. At this time the material gas of TEOS is supplied by introducing carrier gas into a bubbler 8, and injecting it into the reaction furnace.
Bibliography:Application Number: KR19950053654