SEMICONDUCTOR DEVICE

• Main Authors: ELLWANGER, RUSSELL CRAIG, SCHMITZ, JOHANNES ELISABETH JOSEF, VAN DIJK, ANTONIUS JOHANNES MARIA
• Format: Patent
• Language: English; Korean
• Published: 17.08.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

본 발명은 수소에 의해 텅스텐 헥사플루오라이드를 환원시킴으로써 기판의 표면상에 텅스텐층을 설치하는 반도체 장치 제조방법에 관한 것이다. 본 발명에 따라서, 시레인에 의한 텅스텐 헥사플루오라이드 환원에 의해 기판 상에 텅스텐 층을 먼저 설치함으로써 기판의 텅스텐의 접촉 저항이 상당히 감소된다. The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen. According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.