ELECTRONIC CIRCUIT

• Main Authors: BAOHUN, CUI, MUTSUO, YAMAMOTO, MINORU, MIYAZAKI, AKANE, MURAKAMI
• Format: Patent
• Language: English; Korean
• Published: 14.04.1998
• Edition: 6
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LABELS OR NAME-PLATES; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

본 발명은 절연기판상에 형성되고, 반도체층을 포함하는 박막트래지스터들(TFTs)을 갖는 전자회로에 관한 것이다. 반도체층의 두께는 1500 이하 ,예로 100 내지 750 이다. 주로 티타늄 및 질소로 구성되는 제1층이 반도체층 위에 형성되어 있다. 알루미늄으로 구성되는 제2층은 제1층의 상부에 형성되어 있다. 제1및 제2층을 전도성 인터커넥트로 패터닝되어 있다. 제2층의 바닥표면은 실질적으로 완전히 제1층과 밀접히 접촉해 왔다. 상기 인더커넥트는 반도체층과 양호한 접촉을 갖는다. An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 , e.g., between 100 and 750 . A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.