FABRICATING METHOD OF CAPACITOR DIELECTRIC FILM

A storage electrode(22) is formed on the insulating surface(21) formed on the semiconductor substrate(20). By the exposure of the storage electrode(22), the natural oxide film(23) is formed on the surface of the storage electrode(22), after wet chemical washing, perform continuously baking in the H2...

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Bibliographic Details
Main Author KIM, EUI-SONG
Format Patent
LanguageEnglish
Published 25.11.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A storage electrode(22) is formed on the insulating surface(21) formed on the semiconductor substrate(20). By the exposure of the storage electrode(22), the natural oxide film(23) is formed on the surface of the storage electrode(22), after wet chemical washing, perform continuously baking in the H2 atmosphere and remove the natural oxide film(23). Until the dielectric film is formed completely, the following process should be performed in status of vacuum. After which form the oxide film(24) over the storage terminal first, keeping the vacuum status, move to the nitride film vaporizing process, the following process.
Bibliography:Application Number: KR19940008222