炭化珪素基板の製造方法

• Format: Patent
• Language: Japanese
• Published: 23.02.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

炭化珪素基板の製造方法は、単結晶炭化珪素のインゴット（１）を準備する工程と、インゴット（１）を切断することにより基板を得る工程とを備えている。そして、基板を得る工程では、インゴット（１）の＜１１−２０＞方向または＜１−１００＞方向とのなす角 が｛０００１｝面への正射影において１５??５?の範囲となる方向αに切断を進行させる。 A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle formed with respect to a <11-20> direction or a <1-100> direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.