METHOD FOR SYNTHESIZING DIAMOND BY VAPOR PROCESS

• Main Authors: YAMAMOTO ISAMU, KOMAKI KUNIO, FUJIMAKI TAKASHI
• Format: Patent
• Language: English
• Published: 13.01.1989
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To deposit diamond grains with good reproducibility in a state, independent of an organic compound by a vapor phase and capable of controlling deposited grain diameter, by using a substrate having one or more iron family metals dispersed and applied to the surface by vapor deposition. CONSTITUTION:A sintered substrate, such as SiC or WC, or substrate, such as Si, W or Mo, which has hitherto been used in a vapor process is prepared. One or more metallic particles, such as Cr, Fe, Co or Ni, are vapor deposited on the surface of the above-mentioned substrate by sputtering, chemical vapor deposition (CVD), etc. The aforementioned substrate subjected to the vapor deposition treatment is then used to synthesize diamond from a hydrocarbon, such as methane or ethane, or an oxygen-containing organic compound, such as methanol, normally a mixture thereof with H2 gas by the vapor process. The above-mentioned synthetic method is same as a conventional method; however, the aforementioned substrate having the vapor-deposited iron family metal grains can be used to, as necessary, readily produce diamond grains having a required grain size and original shape or filmy diamond constituted of the grains.