FORMATION OF HIGH BREAKDOWN STRENGTH BURIED INSULATING FILM

PURPOSE:To obtain a high breakdown strength buried insulating film by forming an insulating film having a 2-layer structure of SiO2/Si3N4. CONSTITUTION:Nitrogen ions are implanted into a P-type substrate 1, and a nitrogen ion implanted region 3 is formed in depth of approx. 6000+ or -2000Angstrom fr...

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Bibliographic Details
Main Authors NISHIMURA TADASHI, AKASAKA YOICHI
Format Patent
LanguageEnglish
Published 14.03.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain a high breakdown strength buried insulating film by forming an insulating film having a 2-layer structure of SiO2/Si3N4. CONSTITUTION:Nitrogen ions are implanted into a P-type substrate 1, and a nitrogen ion implanted region 3 is formed in depth of approx. 6000+ or -2000Angstrom from its surface. Then, oxygen ions 5 are implanted, and an oxygen ion implanted region 6 is formed on the region 3 so as not to superpose it. A protective SiO2 layer 7 is laminated on the substrate 1, and annealed. Thus, an insulating film having a 2-layer structure of SiO2(6)/Si3N4(3) is formed to improve its breakdown strength.
Bibliography:Application Number: JP19870225027