MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: NISHIMURA TADASHI, AKASAKA YOICHI
• Format: Patent
• Language: English
• Published: 14.03.1989
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To obtain a semiconductor substrate having high thickness accuracy of a semiconductor layer, no remaining damage on its semiconductor main surface and high breakdown strength by ion-implanting oxygen to form an oxide layer in the substrate, and epitaxially growing the semiconductor layer thereon. CONSTITUTION:After oxygen ions are implanted into a P-type silicon substrate 1 to form a silicon oxide film 2 as a protective layer, a single crystalline silicon layer 1' is formed by annealing on the surface, and a buried oxide film 3 is formed under the layer 1'. Then, the film 2 on the surface is removed, an N<+> type diffused layer 4 is formed, the surface is well cleaned, and an n<-> type silicon layer 5 is epitaxially grown. Thereafter, a step of processing a semiconductor is conducted to obtain a silicon island isolated by the same dielectric as that of a silicon island on a conventional insulating layer. Since the semiconductor layer is epitaxially grown in this manner, the surface of the silicon layer is not polished and not accordingly damaged. Further, the thickness of the film is formed constantly.