MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To enable the ROM coding by using an ordinary ion implanter, by forming an oxide film on a substrate by oxidizing selectively the substrate, implanting impurity on the whole surface by ion implanting method, and forming an impurity diffusion layer of opposite conductivity type. CONSTITUTION:...

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Bibliographic Details
Main Author SUDO KATSUHIKO
Format Patent
LanguageEnglish
Published 21.02.1989
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable the ROM coding by using an ordinary ion implanter, by forming an oxide film on a substrate by oxidizing selectively the substrate, implanting impurity on the whole surface by ion implanting method, and forming an impurity diffusion layer of opposite conductivity type. CONSTITUTION:After a gate oxide film 15 is formed, a first impurity ( P<+> ion) 14 for ROM coding of a depletion transistor 11b is implanted by ion implantation before a poly-Si layer 17 is formed, and an N<-> channel doped layer 16 is formed. Thereby, an ion implanter with high energy of 400keV, which makes ions penetrate the poly-Si film 17 in the prior art, can be unnecessitated.
Bibliography:Application Number: JP19870203736