PRODUCTION OF CRYSTAL

PURPOSE:To obtain crystal useful for semiconductor laser inexpensively and in high yield, by successively feeding an element having high dissociation pressure, a sealing agent and another element having high specific gravity to a crucible and heating under specific pressure while preventing raising...

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Bibliographic Details
Main Authors ODA OSAMU, KOHIRO KENJI, SHINOHARA KAZUO
Format Patent
LanguageEnglish
Published 20.02.1989
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To obtain crystal useful for semiconductor laser inexpensively and in high yield, by successively feeding an element having high dissociation pressure, a sealing agent and another element having high specific gravity to a crucible and heating under specific pressure while preventing raising of the sealing agent. CONSTITUTION:A crucible 4 is charged with a disklike red phosphorus lump 11 having the same diameter as that of the crucible, on which a similarly disklike sealing agent 12 such as B2O3 is placed. Further In lump 13 is placed on the sealing agent. Then the crucible 4 is set in a susceptor 3 of a single crystal pulling up device of high pressure and suppressing jigs 8 are fixed to an inner wall of a high-pressure container 1. Then a N2 gas under about 60atm., having >=equilibrium vapor pressure of In is introduced to the container 1, the In 13 is heated at about 160 deg.C by a heater 2, melted, the B2O3 12 and the phosphorus 11 to raise to the surface of the melted In 13 are prevented from raising by the suppressing jigs 8. Then the B2O3 12 is heated to about 600 deg.C, melted, raised to the surface of the In 13, the sunk In 13 is abruptly reacted with the phosphorus 11 to synthesize InP, which is crystallized. Then the prepared crystal is pulled up by a pulling up device to give crystal.
Bibliography:Application Number: JP19870200663