PRODUCTION OF GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

• Main Author: SATO MASAZUMI
• Format: Patent
• Language: English
• Published: 08.02.1989
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To prevent penetration of group V droplet to a growing crystal and produce the titled single crystal having low rearrangement in good yield, by dipping a specific and prism-shaped seed crystal into a raw material melt and pulling up the dipped crystal. CONSTITUTION:A prism-shaped seed crystal 3 having a long axis of and four side faces parallel to the long axis of {011} is dipped into a raw mate rial melt and a single crystal 1 is pulled up by a liquid sealing pulling-up method to provide the group III-V semiconductor single crystal wherein Ga of corn part, facet 2a and As facet 2b do not coincide with four angles 4 of the seed crystal 3 and rearrangement density is 3,000-20,000/cm .