PRODUCTION OF GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

PURPOSE:To prevent penetration of group V droplet to a growing crystal and produce the titled single crystal having low rearrangement in good yield, by dipping a specific and prism-shaped seed crystal into a raw material melt and pulling up the dipped crystal. CONSTITUTION:A prism-shaped seed crysta...

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Bibliographic Details
Main Author SATO MASAZUMI
Format Patent
LanguageEnglish
Published 08.02.1989
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To prevent penetration of group V droplet to a growing crystal and produce the titled single crystal having low rearrangement in good yield, by dipping a specific and prism-shaped seed crystal into a raw material melt and pulling up the dipped crystal. CONSTITUTION:A prism-shaped seed crystal 3 having a long axis of and four side faces parallel to the long axis of {011} is dipped into a raw mate rial melt and a single crystal 1 is pulled up by a liquid sealing pulling-up method to provide the group III-V semiconductor single crystal wherein Ga of corn part, facet 2a and As facet 2b do not coincide with four angles 4 of the seed crystal 3 and rearrangement density is 3,000-20,000/cm .
Bibliography:Application Number: JP19870193826