THERMAL TREATMENT EQUIPMENT FOR WAFER

• Main Authors: TAKAHASHI SHOICHI, SATO MITSUO, FURUGANE MATSUZO, IWASAKI KIMITOSHI, WAKABAYASHI YOSHIRO
• Format: Patent
• Language: English
• Published: 03.02.1989
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To prevent the accident of the falling-off of a semiconductor wafer from a lifting gear or an intermittent shifter in a heating furnace while improving the heating efficiency of the semiconductor wafer and attaining uniform heating by boring an exhaust groove to the bottom as a heating surface for the heating furnace on which the semiconductor wafer is placed. CONSTITUTION:A heating furnace 61 in which through-holes 62A are bored to the base 61A at regular intervals toward an outlet section from an inlet section and exhaust grooves 61B are bored near where the through-holes 62A are drilled, a lifting gear 63 intermittently inserting support members 63C to the through-holes 62A and lifting up and lifting down semiconductor wafers to the through-holes 62A, and an intermittent shifter 65, intruding support means 67D to the undersides of the semiconductor wafers lifted by the support members 63C, receiving the semiconductor wafers from the support members 63C inserted into the through-holes 62A, and transferring the wafers toward the outlet section for said heating furnace 61 to make the wafers supported by other support members 63C inserted into adjacent through-holes 62A, are provided. Said exhaust grooves 61B have annular sections 61B1 and its diametral rectilinear sections 61B2.