PLASMA TREATMENT DEVICE

• Main Author: ANADA TAKAHIRO
• Format: Patent
• Language: English
• Published: 31.01.1989
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To deposit a film or to etch it uniformly by installing a mechanism to detect a position of a magnet and to stop it at an arbitrary position. CONSTITUTION:This device is constituted in the following way: a sensor to detect a position of a permanent magnet 18 is installed at an upper part of the permanent magnet 18 which generates a magnetic field on the surface of a cathode 15; a control mechanism to stop this permanent magnet 18 at an arbitrary position is connected electrically to a driving source and the sensor. As a result, it is possible to stop the permanent magnet 18 at the arbitrary position. Accordingly, an electric discharge can be operated uniformly without being imbalanced locally; particles from a target 16 are scattered uniformly onto a substrate 19; a film thickness can be made uniform.