FORMATION OF CUINSE2 FILM

PURPOSE:To easily form a CuInSe2 film by applying paste of CuInSe2 powder to a substrate by screen printing and by radiating prescribed laser light to dry and solidify the paste. CONSTITUTION:Paste of CuInSe2 crystal powder is applied to a substrate by screen printing. CO2 laser, Nd:YAG laser or sem...

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Bibliographic Details
Main Author HAMA TOSHIO
Format Patent
LanguageEnglish
Published 30.01.1989
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:PURPOSE:To easily form a CuInSe2 film by applying paste of CuInSe2 powder to a substrate by screen printing and by radiating prescribed laser light to dry and solidify the paste. CONSTITUTION:Paste of CuInSe2 crystal powder is applied to a substrate by screen printing. CO2 laser, Nd:YAG laser or semiconductor laser is prepd. as a laser light source. Laser light from the source is radiated on the paste applied surface of the substrate. The paste is dried and solidified by the radiation and a CuInSe2 film is formed.
Bibliography:Application Number: JP19870184972