ION PLATING DEVICE

• Main Authors: SHINOHARA JOSHI, OKABE SHUICHI
• Format: Patent
• Language: English
• Published: 25.04.1988
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To provide an ion plating device which can improve an ionization rate without requiring the difficult control and administration of a power supply, by providing magnetic force which forms magnetic lines of force along the trajectory of thermions heading toward a DC discharge electrode plate. CONSTITUTION:An evaporating material 3 heated by an electron beam 6 is evaporated as a material 4 for vapor deposition in a housing 1. The thermions 10 released from a vapor source 3 toward the DC discharge electrode plate 9 are applied with the rotating force around the magnetic lines 16 of force in accordance with the Fleming's left-hand rule by the influence of the magnetic lines 16 of force of a magnet 15. The thermions 10 are further bombarded against the electrode plate 9 by the resulted force of the attraction force which the electrode plate 9 generates by drawing the spiral rotation trajectory around the lines 16. The thermions 10 collide against a reactive gas 2 and the material 4 respectively and drive electrons off the same, thereby converting both to positive ions during this time. The gas 2 and material 4 converted to the positive ions are attracted by a base material 11 of low potential to be subjected to vapor deposition by which said gas and material are bombarded and adhered to the base material. The material 4 and the gas 2 combine to form the vapor deposited film at this time.