JPS6358368B

PURPOSE:To enable preferable electric insulation, heat dissipation and noise prevention of the semiconductor device integrating an element, a support therefor and an insulating carrier disposed therebetween by forming the insulating carrier of silicon carbide and silicon dioxide. CONSTITUTION:A sili...

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Bibliographic Details
Main Authors KURIHARA YASUTOSHI, YATSUNO KOMEI
Format Patent
LanguageEnglish
Published 15.11.1988
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable preferable electric insulation, heat dissipation and noise prevention of the semiconductor device integrating an element, a support therefor and an insulating carrier disposed therebetween by forming the insulating carrier of silicon carbide and silicon dioxide. CONSTITUTION:A silicon transistor pellet 1 is integrated through the silicon carbide plate 4 provided with the thermally oxidized silicon dioxide film 3 as an insulating carrier on a copper support 2, the emitter and the base regions of the pellet 1 are connected to lead wires 5 and 6 respectively, and the collector region is connected through an aluminum-nickel-silver laminate evaporation film 7 formed on the film 3 to a lead wire 8.
Bibliography:Application Number: JP19790090992