JPS6349922B

PURPOSE:To preferably isolate between input and output terminals and between output terminals of a microwave integrated circuit by forming a plurality of active regions in an FET forming the microwave IC, commonly connecting the gate and drain electrodes to the respective active regions and connecti...

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Bibliographic Details
Main Authors HORI SHIGEKAZU, SHIBATA KYOHIRO
Format Patent
LanguageEnglish
Published 06.10.1988
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
SEMICONDUCTOR DEVICES
WAVEGUIDES
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Summary:PURPOSE:To preferably isolate between input and output terminals and between output terminals of a microwave integrated circuit by forming a plurality of active regions in an FET forming the microwave IC, commonly connecting the gate and drain electrodes to the respective active regions and connecting the drain electrodes as a plurality to the respective regions when the electrodes are connected to the active regions. CONSTITUTION:N<+> type GaAs regions 14, 15, 16 becoming the active regions of an FET are formed on a Cr-doped semi-insulating GaAs substrate 17 by an epitaxially growing method and a photoetching method, and an aluminum gate electrode 10 is formed while producing the a metal depositing and lifting-off methods a Schottky barrier between the active regions. Similarly, when a source electrode 9 and a drain electrode are formed, the drain electrode is divided into three electrode segments 11, 12, 13. Thereafter, the electrodes 9, 10 are commonly connected to the respective active regions, and the segments 11-13 are respectively connected to the regions 14-16. In this manner it can avoid the deterioration of voltage standing wave ratio at the input terminal.
Bibliography:Application Number: JP19810042895