PRODUCTION OF SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR

• Main Author: SATO MASAZUMI
• Format: Patent
• Language: English
• Published: 28.01.1988
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To reduce the generation of dislocation on the surface of single crystal and to obtain possibly long-sized crystal having low dislocation by adding oxygen of specified amount to the inert gas atmosphere while the upbringing of crystal in case of pulling-up crystal of a compd. semiconductor by a liquid capsule pulling method. CONSTITUTION:Single crystal of a compd. semiconductor is pulled up by Czochralski method using a liquid sealer. In this case, it is brought up by adding the partial pressure of oxygen not more than 1/10 of the pressure of inert gas to the inert gas atmosphere while the upbringing of crystal. By the addition of oxygen, an oxide film layer is formed on the surface of crystal which is exposed in the atmospheric gas from the sealer and thereby the roughness of the surface of crystal is prevented.