SEMICONDUCTOR MATERIAL

PURPOSE:To enable the high-speed operation of a transistor when a TFT is manufactured, and to obtain the excellent reproducibility of electric physical properties by forming a polysilicon layer in a thin layer of 1000Angstrom or less and bringing the smoothness of the polysilicon layer to + or -20An...

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Bibliographic Details
Main Authors TERAO NORIYUKI, INO MASUMITSU, HIROI MASAKI, ABE SHUYA
Format Patent
LanguageEnglish
Published 26.08.1988
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To enable the high-speed operation of a transistor when a TFT is manufactured, and to obtain the excellent reproducibility of electric physical properties by forming a polysilicon layer in a thin layer of 1000Angstrom or less and bringing the smoothness of the polysilicon layer to + or -20Angstrom or less. CONSTITUTION:In a semiconductor material in which a poly-Si layer 2 used as an active layer for a TFT (a thin-film transistor) is shaped onto a transparent insulating substrate l, the poly-Si layer 2 is formed in a thin-film of 1000Angstrom or less, and the smoothness of the layer 2 is brought to + or -20Angstrom or less. That is, grain size can be scaled up by a change into the thin-film, thus increasing mobility. Leakage currents from a gate electrode at the time of the formation of the TFT can be reduced extremely by the smoothing of the surface while the film having excellent reproducibility can be shaped.
Bibliography:Application Number: JP19870041201